Thermoelectric properties of nitrogen-doped Ge2Sb2Te5 thin films (vol 33, pg 12750, 2022)

被引：0
|
作者：
Qian, Dongjie [1 ]
Miao, Jiale [1 ]
Yuan, Pengyue [1 ]
Yuan, Yanyan [1 ]
Song, Dongdong [2 ]
Lan, Rui [1 ]
机构：
[1] Jiangsu Univ Sci & Technol, Sch Mat Sci & Engn, 2 Mengxi Rd, Zhenjiang 212003, Jiangsu, Peoples R China
[2] Yantai Engn & Technol Coll, 92 Zhujiang Rd,Yantai ETDZ, Yantai 264000, Shandong, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2024年 / 35卷 / 27期
关键词：
D O I：
10.1007/s10854-024-13536-x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页数：2
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