Recent Progress in Emerging 2-D Transition-Metal Dichalcogenide-Based Gas Sensors: A Review

被引:0
|
作者
Kumar, Ashok [1 ]
Kumar, Mahesh [1 ,2 ]
机构
[1] Indian Inst Technol Jodhpur, Dept Elect Engn, Jodhpur 342030, India
[2] Silesian Tech Univ, Fac Automat Control Elect & Comp Sci, Dept Cybernet Nanotechnol & Data Proc, PL-44100 Gliwice, Poland
关键词
Sensors; Gas detectors; Sensitivity; Chemicals; Sensor phenomena and characterization; Doping; Optical sensors; Gas sensor; large-scale synthesis; layered structures; sensitivity; transition-metal dichalcogenides TMDs; two-dimensional (2-D) material; LAYER MOS2; MONOLAYER; DEPOSITION; BEHAVIOR; GROWTH; WS2;
D O I
10.1109/JSEN.2024.3422972
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
There has been significant progress in the development of two-dimensional (2-D) transition-metal dichalcogenides (TMDs) as gas sensor materials over the last decade. These materials are currently at the forefront of advanced sensing technology. TMDs, such as MoS2, WS2, and SnS2, are excellent gas detectors because of their layered architectures, large surface-to-volume ratios, and adaptable electrical characteristics. The present study makes an effort to provide a synopsis of the brief history and status, importance, and advancement of these materials, and also, covered big research issues and challenges. Finally, this article discusses the advances in science and technology that needed to address the challenges. The gas sensor technology has advanced significantly with the integration of 2-D TMDs, providing improved selectivity, sensitivity, and performance. Even if there are still problems with repeatability and environmental stability, new developments in technology and research are resolving these concerns and opening the door for the wider use of TMD-based gas sensors. These materials have revolutionary potential in the realm of gas sensing, and further research and development into them might greatly advance industrial safety, medical diagnostics, and environmental monitoring.
引用
收藏
页码:25221 / 25226
页数:6
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