Beyond the standard model of topological Josephson junctions: From crystalline anisotropy to finite-size and diode effects (vol 124, 252602, 2024)

被引:1
|
作者
Pekerten, Baris [1 ]
Brandao, David S. [1 ]
Bussiere, Bailey [1 ]
Monroe, David [1 ]
Zhou, Tong [1 ,2 ]
Han, Jong E. [1 ]
Shabani, Javad [3 ]
Matos-Abiague, Alex [4 ]
Zutic, Igor [1 ]
机构
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] Eastern Inst Technol, Eastern Inst Adv Study, Ningbo 315200, Zhejiang, Peoples R China
[3] NYU, Ctr Quantum Phenomena, Dept Phys, New York, NY 10003 USA
[4] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA
关键词
D O I
10.1063/5.0230718
中图分类号
O59 [应用物理学];
学科分类号
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页数:1
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  • [1] Beyond the standard model of topological Josephson junctions: From crystalline anisotropy to finite-size and diode effects
    Pekerten, Baris
    Brandao, David S.
    Bussiere, Bailey
    Monroe, David
    Zhou, Tong
    Han, Jong E.
    Shabani, Javad
    Matos-Abiague, Alex
    Zutic, Igor
    APPLIED PHYSICS LETTERS, 2024, 124 (25)