Optimization of MOSFET Copper Clip to Enhance Thermal Management Using Kriging Surrogate Model and Genetic Algorithm

Metal-oxide-semiconductor field-effect transistors (MOSFETs) are critical in power electronic modules due to their high-power density and rapid switching capabilities. Therefore, effective thermal management is crucial for ensuring reliability and superior performance. This study used finite element analysis (FEA) to evaluate the electro-thermal behavior of MOSFETs with copper clip bonding, showing a significant improvement over aluminum wire bonding. The aluminum wire model reached a maximum temperature of 102.8 degrees C, while the copper clip reduced this to 74.6 degrees C. To further optimize the thermal performance, Latin Hypercube Sampling (LHS) generated diverse design points. The FEA results were used to select the Kriging regression model, chosen for its superior accuracy (MSE = 0.036, R2 = 0.997, adjusted R2 = 0.997). The Kriging model was integrated with a Genetic Algorithm (GA), further reducing the maximum temperature to 71.5 degrees C, a 4.20% improvement over the original copper clip design and a 43.8% reduction compared to aluminum wire bonding. This integration of Kriging and the GA to the MOSFET copper clip package led to a significant improvement in the heat dissipation and overall thermal performance of the MOSFET package, while also reducing the computational power requirements, providing a reliable and efficient solution for the optimization of MOSFET copper clip packages.