Ab initio study of temperature-dependent piezoelectric and electronic properties of thermally stable GaPO4

被引:2
|
作者
Yang, Xiaoqing [1 ,2 ]
Guo, Pan [2 ]
Hu, Shunbo [2 ]
Gao, Zhibin [3 ]
Yao, Wenliang [2 ]
Cheng, Jinrong [2 ]
Ponce, Samuel [4 ,5 ]
Wang, Baigeng [1 ]
Ren, Wei [2 ]
机构
[1] Nanjing Univ, Sch Phys, Nanjing 210093, Peoples R China
[2] Shanghai Univ, Mat Genome Inst, Int Ctr Quantum & Mol Struct, Phys Dept,State Key Lab Adv Special Steel,Shanghai, Shanghai 200444, Peoples R China
[3] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
[4] Catholic Univ Louvain, Inst Condensed Matter & Nanosci, European Theoret Spect Facil, Chemin Etoiles 8, B-1348 Louvain La Neuve, Belgium
[5] WEL Res Inst, Ave Pasteur 6, B-1300 Wavre, Belgium
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
MOLECULAR-DYNAMICS; SINGLE-CRYSTALS; EXPANSION;
D O I
10.1039/d4cp02270j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Gallium-phosphate (GaPO4) is one of the ultra-high thermally stable piezoelectric materials with a high critical temperature of 1206 K. Here, first principles calculations with quasi-harmonic approximation are performed to study thermal and other physical properties of alpha-GaPO4. For the electronic structure, we focus on the electron-phonon interaction and lattice expansion effects on the temperature-dependent band gap, which plays a significant role in zero-point renormalization. Significantly, the large piezoelectric constants e(11) primarily comes from intrinsic sensitivity of Ga and O sites to axial strain, while P atoms contribute little, which remains true in other quartz-like type APO(4) (A = B, Al, In). Our work provides an insight into the temperature-dependent electronic and piezoelectric properties of alpha-GaPO4 and motivates its applications in a high temperature environment.
引用
收藏
页码:21530 / 21537
页数:8
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