Thin channel Ga2O3 MOSFET with 55 GHz fMAX and <bold>></bold>100 V breakdown

This Letter reports a highly scaled 90 nm gate length beta-Ga2O3 (Ga2O3) T-gate MOSFET with a power gain cutoff frequency (f(MAX)) of 55 GHz. The 60 nm thin epitaxial Ga2O3 channel layer was grown by molecular beam epitaxy, while the highly doped (n++) source/drain regions were regrown using metal organic chemical vapor deposition. Maximum on current (I-DS,I-MAX) of 160 mA/mm and trans-conductance (g(m)) around 36 mS/mm were measured at V-DS = 10 V for L-SD = 1.5 mu m device. Transconductance and on current are limited by high channel sheet resistance (R-sheet). Gate/drain breakdown voltage of 125 V was measured for L-GD = 1.2 mu m. We extracted 27 GHz current gain cutoff frequency (f(T)) and 55 GHz f(MAX) for 20 V drain bias for unpassivated devices. While no current collapse was seen initially for both drain and gate lag measurements for 500 ns pulse, moderate current collapse was observed after DC, RF measurements caused by electrical stressing. We calculated a high f(T). V-BR product of 3.375 THz V, which is comparable to the state-of-the-art GaN HEMTs. This figure of merit suggests that Ga2O3 could be a potential candidate for X-band application.