Microscopic characterizations for 2D material-based advanced electronics

被引:0
|
作者
Zheng, Fangyuan [1 ]
Li, Lain-Jong [1 ]
机构
[1] Univ Hong Kong, Dept Mech Engn, Pokfulam, Hong Kong, Peoples R China
关键词
Microscopy; 2D materials; Advanced electronics; Atomic level characterization; ATOMIC LAYER DEPOSITION; COULD; MOS2;
D O I
10.1016/j.micron.2024.103707
中图分类号
TH742 [显微镜];
学科分类号
摘要
Two-dimensional (2D) materials have gained significant attention as potential candidates for next-generation electronics, owing to their unique properties such as ultrathin layer thickness, mechanical flexibility, and tunable bandgaps. The distinctive characteristics of 2D materials necessitate the development of nanoscale advanced characterization methods. In this review, we explore the role of microscopy techniques in developing 2D materials-based electronics, from material synthesis and characterization to device performance and reliability. We address the applications of microscopies by delving into the perspectives of channel materials, metal contacts, dielectric materials, and device architectures. Additionally, we provide an outlook on the future directions and potential utilization of microscopy techniques in future 2D semiconductor industry.
引用
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页数:8
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