Wake-Up Free Hf0.5Zr0.5O2 FerroelectricCapacitor by Annealing and Insertinga Top Dielectric Layer

被引：0
|
作者：
Liao, Min [1 ,2 ]
Chai, Junshuai [1 ,2 ]
Xiang, Jinjuan [3 ]
Han, Kai [4 ]
Wang, Yanrong [5 ]
Xu, Hao [1 ,2 ]
Wang, Xiaolei [1 ,2 ]
Zhang, Jing [5 ]
Wang, Wenwu [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
[3] Beijing Superstring Acad Memory Technol, Beijing 100176, Peoples R China
[4] Weifang Univ, Sch Phys & Elect Informat, Weifang 261061, Shandong, Peoples R China
[5] North China Univ Technol, Sch Informat Sci & Technol, Beijing 100144, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Capacitors; Annealing; Iron; Hafnium oxide; Zirconium; Tin; Electric fields; dielectric layer (DEL); ferroelectric (FE) capacitors; Hf0.5Zr0.5O2; wake-up free;
D O I：
10.1109/TED.2024.3446753
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we realize the fabrication of wake-up free Hf0.5Zr0.5O2 (HZO)-based ferroelectric (FE) capacitors with metal/dielectric layer/ferroelectric/metal (MIFM) structure by annealing and inserting top dielectric layer (DEL). We find that MIFM capacitors with 1-nm Hf0.5Zr0.5O2 , and Al2O3 top DEL still exhibit wake-up free behavior when the annealing temperature decreases from 550 degree celsius. The ab initio calculations reveal that the top DEL suppresses the formation of oxygen vacancies at the TiN/DE and DE/HZO interfaces, which can inhibit the domain pinning effect. In addition, the capacitors with 1-nm DEL demonstrate improved endurance under the same annealing temperature and electric field conditions. Our work is helpful for understanding wake-up effect and for the reliability design of HZO-based FE devices.
引用
收藏
页码：6022 / 6026
页数：5
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