Ce-doped inorganic single crystals are currently used in scintillators in various instruments because of their outstanding luminescence properties. However, these crystals are expensive to manufacture and are inefficient in terms of their energy consumption. In this study, xCeF(3)-doped 40MgF(2)-20Al(2)O(3)-40B(2)O(3) glasses (x = 0-30 mol%) were prepared by a melt-quenching method in N-2 atmosphere, and their photoluminescence, scintillation, and dosimetry properties were investigated. The X-ray absorption fine edge spectroscopy of the Ce L-3-edge indicated that the doped Ce exists in the form of Ce3+ ions, and that Ce4+ does not form because of the low basicity of the glass. The glasses underwent photoluminescence at 380 nm due to the 5d-4f transition of Ce3+, with a very high quantum yield of up to similar to 100 % and low concentration quenching. The peak shape of the X-ray-induced luminescence was similar to that of the PL with a decay time of 110-70 ns. The light yields for gamma rays (Cs-137 source) were obtained from the pulse-height spectra, and the highest light yield among the present samples was 1071 photons/MeV with the energy resolution of 17 %. The thermoluminescence glow curves had peaks at 365 and 460 K and a good linear relationship existed in the range of 0.5-1000 mGy, with the dose response being comparable to that of a commercial dosimeter. The origin of the high quantum yield was probed by analyzing the glass structure using molecular dynamics simulation based on a graph neural network. A strong tendency to selectively bind cations and anion pairs was found: Mg preferably binds to F, B preferably binds to O, and Al binds to O and F, which can be explained by soft and hard acid and base theories. Because of this selectivity the glass forms fluoride- and oxide-rich domains, which seem to be responsible for the more effective dispersal of the luminescent center. The results of this study are expected to contribute to the development of glasses with enhanced photoluminescence and scintillation luminescence properties.
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Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R China
Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Ctr High Power Laser Components, Shanghai 201800, Peoples R ChinaShanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R China
Liu Li-Wan
Zhou Qin-Ling
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Ctr High Power Laser Components, Shanghai 201800, Peoples R ChinaShanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R China
Zhou Qin-Ling
Shao Chong-Yun
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Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R China
Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Ctr High Power Laser Components, Shanghai 201800, Peoples R ChinaShanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R China
Shao Chong-Yun
Zhang Yu
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Ctr High Power Laser Components, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaShanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R China
Zhang Yu
Hu Li-Li
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Ctr High Power Laser Components, Shanghai 201800, Peoples R ChinaShanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R China
Hu Li-Li
Yang Qiu-Hong
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Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R ChinaShanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R China
Yang Qiu-Hong
Chen Dan-Ping
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Ctr High Power Laser Components, Shanghai 201800, Peoples R ChinaShanghai Univ, Sch Mat Sci & Engn, Shanghai 200436, Peoples R China
机构:
Department of Physics, Kyungpook National University, Daegu,41566, Korea, Republic ofDepartment of Physics, Kyungpook National University, Daegu,41566, Korea, Republic of
Saha, Sudipta
Aryal, Pabitra
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Center for Underground Physics, Institute for Basic Science (IBS), Daejeon,34126, Korea, Republic ofDepartment of Physics, Kyungpook National University, Daegu,41566, Korea, Republic of
Aryal, Pabitra
Kim, H.J.
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Department of Physics, Kyungpook National University, Daegu,41566, Korea, Republic ofDepartment of Physics, Kyungpook National University, Daegu,41566, Korea, Republic of
Kim, H.J.
Khan, Arshad
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Department of Physics, Kyungpook National University, Daegu,41566, Korea, Republic ofDepartment of Physics, Kyungpook National University, Daegu,41566, Korea, Republic of
Khan, Arshad
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Quang, Nguyen Duy
Pandey, Indra Raj
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Center for Underground Physics, Institute for Basic Science (IBS), Daejeon,34126, Korea, Republic ofDepartment of Physics, Kyungpook National University, Daegu,41566, Korea, Republic of
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Kyungpook Natl Univ, Dept Phys, Daegu 41566, South KoreaKyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
Saha, Sudipta
Aryal, Pabitra
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Inst Basic Sci IBS, Ctr Underground Phys, Daejeon 34126, South KoreaKyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
Aryal, Pabitra
Kim, H. J.
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Kyungpook Natl Univ, Dept Phys, Daegu 41566, South KoreaKyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
Kim, H. J.
Khan, Arshad
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Kyungpook Natl Univ, Dept Phys, Daegu 41566, South KoreaKyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
Khan, Arshad
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Nguyen Duy Quang
Pandey, Indra Raj
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Inst Basic Sci IBS, Ctr Underground Phys, Daejeon 34126, South KoreaKyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
Pandey, Indra Raj
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Kaewkhao, J.
Kothan, S.
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Chiang Mai Univ, Fac Associated Med Sci, Ctr Radiat Res & Med Imaging, Dept Radiol Technol, Chiang Mai 50200, ThailandKyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Du, Ying
Yuan, Jun
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Yuan, Jun
Han, Shuai
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Han, Shuai
Yan, Sasa
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Yan, Sasa
Wang, Yajie
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Wang, Yajie
Chen, Danping
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China