"Enhancing" the energy storage properties of dielectric films through ultra-small area metallization

被引：1
|
作者：
Chen, Fujia [1 ]
Li, Jianfeng [1 ]
Zhao, Yuetao [1 ,2 ,3 ]
Zhou, Yujiu [2 ]
Ye, Hu [1 ,2 ]
Yang, Yajie [1 ]
Xu, Jianhua [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China
[2] Xinyun Elect Components Co, Dept Film Capacitors, China ZhenHua Grp, Guiyang 550018, Peoples R China
[3] Jiangsu Univ Sci & Technol, Ocean Coll, Zhenjiang 212100, Peoples R China
来源：
MATERIALS LETTERS | 2024年 / 377卷
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
Electronic materials; Polymers; BOPVDF; Metallization area; Energy storage density;
D O I：
10.1016/j.matlet.2024.137359
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The flat-plate capacitance model is commonly used to study the energy-storage performance of dielectric films. The area of the metal electrodes can significantly affect the test results of the energy storage performance. Ultra-small metallization area films exhibit stunning charge-discharge behavior in pulse testing. An energy storage density of 56.98 J/cm(3) was easily obtained in tests on pure biaxially oriented poly (vinylidene fluoride) (BOPVDF) films with an ultra-small metallization area of 0.01 cm(2). The edge electric field is the main reason for the ultrahigh energy density of the films.
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页数：4
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