Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing

Recently, ferroelectric memory utilizing hafnium oxide has emerged as an attractive option compared to existing memory technologies, primarily due to its scalability and energy-efficient advantages. Among them, hafnium zirconium oxide (HZO) is examined for its short-term memory characteristics to achieve a reservoir computing system known to exhibit remarkable polarization properties, being able to switch between distinct polarization states under the influence of an electric field. These unique properties are of utmost importance in ferroelectric memory applications, where they play a pivotal role in the storage and retrieval of binary data. In this study, we identify and experiment with the electrical characteristics of a ferroelectric tunnel junction (FTJ) device with a metal-ferroelectric-semiconductor (MFS) structure using TiN as the top electrode and HZO as the ferroelectric layer. Moreover, we assess the performance of the device by evaluating its maximum 2P(r) (remnant polarization) and tunneling electro resistance (TER) values in different conditions of cell area. Furthermore, we analyze and show short-term memory (STM) characteristics and synaptic properties with 5 cycles of potentiation and depression under conditions of stable dynamic range by coordinating identical and incremental pulses. In the case of incremental pulses (>95 %), the MNIST pattern recognition accuracy is higher than in the case of identical pulses (>94 %). Through a sequence of procedures, the synaptic characteristics of FTJs are confirmed to assess their suitability for use as an artificial synaptic device.