A 2nd-order noise-shaping SAR-assisted pipeline ADC with order-boosted gain-error-shaping

被引:0
|
作者
Fu, Guolong [1 ]
Zhang, Yanbo [1 ]
Wang, Yan [2 ]
Zhao, Zhiyu [2 ]
Liu, Shubin [1 ]
Zhu, Zhangming [1 ]
机构
[1] Xidian Univ, Key Lab Analog Integrated Circuits, Xian 710071, Peoples R China
[2] Natl Key Lab Integrated Circuits & Microsyst, Chongqing, Peoples R China
来源
MICROELECTRONICS JOURNAL | 2024年 / 151卷
基金
中国国家自然科学基金;
关键词
Analog-to-digital converter (ADC); Noise-shaping SAR-Assisted pipeline ADC; Interstage gain error shaping (GES);
D O I
10.1016/j.mejo.2024.106353
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a 4th-order interstage gain error shaping (GES) technique in pipeline successive approximation register (SAR) analog-to-digital converters (ADCs), which can substantially suppress the in-band quantization leakage error induced by the gain error. It is realized by simply arranging a low-order cascadedintegrator feed-forward (CIFF) structure in the first stage. In addition, the comparator noise and quantization error can be shaped together with the gain error in the proposed architecture. Verified by simulation in a 28-nm CMOS process, the prototype achieves a signal-to-noise-and-distortion ratio (SNDR) of 77.8 dB over 25-MHz bandwidth (BW) with oversampling ratio (OSR) of 8. Within a gain error range of -33 % to +33 %, the SNDR of the ADC deviates less than 3 dB. Under a 1 V supply voltage, the ADC consumes 3.75 mW and exhibits a Scherier figure of merit (FoMs) of 176 dB.
引用
收藏
页数:9
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