Twist angle-dependent interlayer hybridized exciton lifetimes in van der Waals heterostructures

被引:0
|
作者
Chen, Shihong [1 ]
Sun, Zejun [2 ]
Liu, Huan [2 ]
Xu, Haowen [3 ]
Wang, Chong [2 ]
Han, Rui [2 ]
Wang, Zihao [1 ]
Huang, Shuchun [2 ]
Zhao, Xiaoliang [1 ]
Chen, Zekai [4 ]
Li, Weizhou [5 ]
Liu, Dameng [2 ]
机构
[1] Guangxi Univ, Sch Resources Environm & Mat, Nanning 530004, Guangxi, Peoples R China
[2] Tsinghua Univ, Dept Mech Engn, State Key Lab Tribol Adv Equipment, Beijing 100084, Peoples R China
[3] Univ Sci & Technol Beijing, Institue Adv Mat & Technol, Beijing, Peoples R China
[4] Johns Hopkins Univ, Dept Elect & Comp Engn, 3400 North Charles St, Baltimore, MD 21218 USA
[5] Xiamen Univ Technol, Sch Mat Sci & Engn, Xiamen 361024, Peoples R China
基金
中国国家自然科学基金;
关键词
MONOLAYER; TRANSITION;
D O I
10.1039/d4nr00661e
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The interlayer twist angle has a direct effect on exciton lifetimes in van der Waals heterostructures. At small angles, the interlayer and intralayer excitons in MoSe2/WS2 heterostructures are hybridized, resulting in hybridized excitons with long lifetimes and strong resonance. However, the study of twist-angle modulation of hybridized exciton lifetimes is still insufficient, leading to an unclear understanding of the mechanism through which the twist angle between layers influences the lifetime of hybridized excitons. Here, we observed the formation of hybridized excitons by constructing MoSe2/WS2 heterostructures with different twist angles. The exciton lifetime is found to increase from 0.5 ns to 3.3 ns when the twist angle is reduced from 12 degrees to 1 degrees. This work provides a new perspective on the modulation of the exciton lifetime, enabling further exploration in improving the efficiency of optoelectronic devices. The interlayer twist angle has a direct effect on exciton lifetimes in van der Waals heterostructures.
引用
收藏
页码:14089 / 14095
页数:7
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