Electric Field-Induced Mott Insulator-to-Metal Transition and Memristive Behaviour in Epitaxial V2O3 Thin Film

被引:0
|
作者
De, Binoy Krishna [1 ]
Sathe, V. G. [1 ]
Roy, S. B. [1 ,2 ]
机构
[1] UGC DAE Consortium Sci Res, Raman Lab, Univ Campus,Khandwa Rd, Indore 452001, MP, India
[2] Ramakrishna Mission Vivekananda Educ & Res Inst, Dept Phys, Howrah 711202, West Bengal, India
关键词
Mott insulator; epitaxial film; phase transition; switching; memristor; PURE;
D O I
10.1007/s11664-024-11286-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report an isothermal electric field-induced first-order phase transition from a Mott insulator to the metallic state in the epitaxial thin film of V2O3 in the temperature regime below its Mott transition temperature of approximate to 180 K. This isothermal electric field-induced transition is accompanied by interesting electrothermal history effects, which depend on the measurement paths followed in the electric field-temperature phase space. These interesting properties result in tuneable resistive switching and distinct memristive behaviour in V2O3. A generalized framework of disorder-influenced first-order phase transition in combination with a resistor network model has been used to explain the observed experimental features. These findings promise possibilities for Mott insulators to be used as highly energy-efficient switches in novel technologies such as neuromorphic computing.
引用
收藏
页码:5546 / 5554
页数:9
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