A 6mW Cryogenic SiGe Receiver IC For High-Fidelity Qubit Readout

被引:1
|
作者
Kwende, Randy C. [1 ]
Rosenstock, D. [1 ]
Wang, C. [1 ]
Bardin, J. C. [1 ,2 ]
机构
[1] Univ Massachusetts Amherst, Amherst, MA 01003 USA
[2] Google, Mountain View, CA USA
关键词
Cryo-CMOS; SiGe HBT; BiCMOS; quantum computing; transmon; superconducting qubit; NOISE;
D O I
10.1109/IMS40175.2024.10600326
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A SiGe BiCMOS cryogenic direct-conversion receiver operating at 4K is presented that demonstrates high-fidelity readout of a transmon qubit. Notably, at 6mW, this design demonstrates a readout fidelity greater than 98% in 1 mu s when preceded by a Josephson parametric amplifier with a gain of 15-18 dB. To the best of the authors' knowledge, this is the first system that entirely replaces an InP-HEMT LNA-based receiver chain with a silicon readout integrated circuit. This demonstration represents an important step in the realization of fully integrated, large-scale cryogenic qubit control systems.
引用
收藏
页码:874 / 877
页数:4
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