Enhanced photodegradation performance of Zn-BiPO4 on RhB and TC under the synergistic effect of oxygen vacancies and built-in electric field

被引:1
|
作者
Chen, An [1 ]
Wang, Ni [1 ]
Lu, Rui [1 ]
Zhang, Hongtao [1 ]
Liu, Weichi [2 ]
Shang, Tian [1 ]
Xu, Yang [1 ]
Ruyan, Li [2 ]
Tian, Zheng [2 ]
Gong, Shijing [1 ]
Jiang, Dongmei [1 ]
Zhan, Qingfeng [1 ]
机构
[1] East China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
[2] Shanghai Polytech Univ, Sch Resources & Environm Engn, 2360 Jinhai Rd, Shanghai 201209, Peoples R China
基金
上海市自然科学基金; 中国国家自然科学基金;
关键词
Zn2+ ions doped BiPO4; Built-in electric field; Transition metal doping; Oxygen vacancies; Photodegradation; PHOTOCATALYST;
D O I
10.1016/j.jallcom.2024.176418
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, Zn2+ ions doped BiPO4 photocatalyst was successfully prepared by one-step hydrothermal method for the first time. The degradation rates of the optimal sample on RhB and TC solution reached 91.5 % and 81.25 % under simulated sunlight exposure for 3 and 5 hours, respectively, while pure BiPO4 only reached 59.22 % and 49.4 %. The improved photocatalytic performance was due to the synergistic effect of oxygen vacancies and built-in electric field. The EPR test demonstrated the generation of more oxygen vacancies in the optimal sample. Additionally, the electrochemical experiments showed that the photocurrent intensity of the optimal sample was about 3 times than that of pure BiPO4, indicating an enhanced carrier separation and transfer ability after doping Zn2+ ions. Through density functional theory (DFT), the incorporated Zn2+ ions caused the contraction of crystal structure and the redistribution of charges, leading to a built-in electric field. As few studies pay attention to the relationship between oxygen vacancies and the built-in electric field. This study has enlightening significance for the construction of photocatalysts with oxygen vacancies and built-in electric field through doping engineering.
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页数:13
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