Electronic band structure and optical properties of BGaAsBi/GaAs using 16 band kp Hamiltonian

The numerical simulations of optical and electronic properties of BGaAsBi/GaAs quantum wells (QWs) are obtained by diagonalizing the 16-band kp Hamiltonian with distinct boron and bismuth compositions that exhibit multifaceted potential in 1.3-1.5 mu m. It has been observed that under strain-relaxed conditions for a doping concentration of 12.5 % (B, Bi), the anticipated values of spin-orbit (SO) coupling energy (Delta(SO)) and the bandgap (E-g) are 302 meV and 0.952 eV, respectively. Additionally, strain interaction on band structure decreases the band gap from (E-g = 0.92eV-0.85eV), increasing dopant concentration from 8 % to 12.5 %. The consequence of incorporating both Bi and B impurity is a reduction in electron effective mass of BGaAsBi by similar to 1.3 times concerning the host GaAs, enhancing the optical properties of BGaAsBi/GaAs quantum-confined heterostructures. Moreover, an increase in well-width introduced a red shift and reduced the peak amplitude of the gain spectra. In addition, for solar cell application, the onset of the fundamental absorption edge is depicted at an energy of about 0.96 eV. For laser applications, the optimum threshold current density and quality factor of BGaAsBi/GaAs quantum well achieved at room temperature are 1089 A/cm(2) and 3653, respectively, at well width (w = 2.0 nm), cavity length (L = 0.5 mm), and average thickness of the active region (d = 45 nm). The variation in power density is studied with injected current density, while the quality factor is calculated with well width. The outcomes could be beneficial for future use in optical devices.