2.7 kV β-Ga2O3 Heterojunction Barrier Schottky Diode with Low Leakage Current < 1 mA/cm2 Based upon RESURF Effect

In this paper, we present vertical beta-Ga2O3 heterojunction barrier Schottky diodes (HJBSDs) with variable width (W) of p+ region to optimize the forward and reverse characteristics of devices. The bipolar operation mode of HJBSDs leads to a decreasing specific on-resistance (R-on,R-sp) as W increases. The reverse leakage current in all HJBSDs is significantly suppressed thanks to the reduced surface field (RESURF) effect arising from junction barrier Schottky structure. Furthermore, a floating field rings structure is employed to reduce the electric field at the edge of anode and achieve a high breakdown voltage. A highest breakdown voltage of 2.74 kV with a low leakage current of less than 1 mA/cm(2) and a low R-on,R- sp of 7.5 m Omega.cm(2) were achieved in HJBSD with W of 15 mu m, yielding a superior power figure-of- merit of 1.0 GW/cm(2). This work provides valuable insights into reducing off-state losses for beta-Ga2O3 power devices.