Ultra-Compact Pulse Charger for Lithium Polymer Battery With Simple Built-in Resistance Compensation in Biomedical Applications

被引:1
|
作者
Kim, Yemin [1 ]
Lee, Junhyuck [1 ]
Lee, Byunghun [2 ]
机构
[1] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
[2] Hanyang Univ, Dept Elect Biomed Engn & Semicond Engn, Seoul 04763, South Korea
关键词
Batteries; Lithium; Safety; Polymers; Voltage control; Electrolytes; Logic gates; Battery charger; biomedical applications; built-in resistance (BIR); active implantable medical devices (AIMDs); lithium plating phenomenon; lithium polymer battery; pulse charging; wireless power transfer (WPT); WIRELESS POWER; PARAMETERS; RECTIFIER; FREQUENCY; CIRCUIT; SYSTEM; NOISE;
D O I
10.1109/TBCAS.2024.3401846
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
Active implantable medical devices (AIMDs) rely on batteries for uninterrupted operation and patient safety. Therefore, it is critical to ensure battery safety and longevity. To achieve this, constant current/constant voltage (CC/CV) methods have been commonly used and research has been conducted to compensate for the effects of built-in resistance (BIR) of batteries. However, conventional CC/CV methods may pose the risk of lithium plating. Furthermore, conventional compensation methods for BIR require external components, complex algorithms, or large chip sizes, which inhibit the miniaturization and integration of AIMDs. To address this issue, we have developed a pulse charger that utilizes pulse current to ensure battery safety and facilitate easy compensation for BIR. A comparison with previous research on BIR compensation shows that our approach achieves the smallest chip size of 0.0062 mm(2) and the lowest system complexity using 1-bit ADC. In addition, we have demonstrated a reduction in charging time by at least 44.4% compared to conventional CC/CV methods, validating the effectiveness of our system's BIR compensation. The compact size and safety features of the proposed charging system make it promising for AIMDs, which have space-constrained environments.
引用
收藏
页码:746 / 755
页数:10
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