Improvement in CPP-GMR read head sensor performance using [001]-oriented polycrystalline half-metallic Heusler alloy Co2FeGa0.5Ge0.5 and CoFe bilayer electrode

被引:0
|
作者
Taparia, Dolly [1 ]
Sasaki, Taisuke [1 ]
Nakatani, Tomoya [1 ]
Suto, Hirofumi [1 ]
Miura, Yoshio [1 ]
Li, Zehao [1 ]
Kushwaha, Varun Kumar [1 ]
Inubushi, Kazuumi [2 ]
Ichikawa, Shinto [2 ]
Nakada, Katsuyuki [2 ]
Sasaki, Tomoyuki [2 ]
Mitani, Seiji [1 ]
Sakuraba, Yuya [1 ]
机构
[1] Natl Inst Mat Sci, Res Ctr Magnet & Spintron Mat, Tsukuba 3050047, Japan
[2] TDK Corp, Adv Prod Dev Ctr, Technol & Intellectual Property HQ, Ichikawa, Japan
关键词
Magnetic recording; read head; giant magnetoresistance; Heusler alloy; half-metal; spin-dependent scattering; MAGNETORESISTANCE; FILM; ENHANCEMENT; SPACER; RATIO;
D O I
10.1080/14686996.2024.2388503
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) device with a half-metallic electrode is one of the most promising candidates of next-generation read head for hard disk drive. In this study, we fabricate [001]-oriented polycrystalline CPP-GMR devices with the normal ferromagnet (NFM) CoFe/half-metallic ferromagnet (HMFM) Co2FeGa0.5Ge0.5 (CFGG) bilayer electrodes to enhance the magnetoresistance (MR) ratio by large interfacial spin-dependent scattering at the NFM/HMFM interface. The CoFe/CFGG bilayer electrode provides the additional large interfacial spin-dependent scattering and achieves high MR ratio of 22.7% with the CoFe(4.5 nm)/CFGG(2.5 nm) bilayer electrodes, which is almost three(two) times larger than the MR ratio with the single CoFe(CFGG) (7 nm) electrodes. The bias voltage dependent study revealed an additional advantage of increasing the output voltage |Delta V| by using the CoFe/CFGG bilayer due to the improvement of the endurance against spin-transfer torque under high bias current. A maximum output voltage |Delta V|(max) of 6.5 mV was obtained with the CoFe(5.5 nm)/CFGG(1.5 nm) electrodes, which is the highest ever reported in the CPP-GMR devices with a uniform metallic spacer including high-quality epitaxial devices.
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页数:9
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