Utilization of micromagnetic simulation is a very attractive subject to understand the magnetic behavior of nanowire arrays that tune their geometrical features and magnetic properties. Here, the micromagnetic simulations utilize to investigation of the single, and a 3 x 3 array of iron nanowires with diameters from 30 to 60 nm. The diameter size and the distance between the wires are selected according to the fabrication of iron nanowires grown in alumina templates. The simulation indicated that an increase in diameter led to a decrease in the coercive field and squareness ratio in both single nanowires and nanowire arrays. Besides, the simulation discloses that the magnetization reversal process of the nanowires with diameters more than 42 nm occurs through the nucleation and propagation of vortex domain walls. In the nanowires array, an increase in wire diameter increases the number of jumps in the hysteresis loop, indicating a more magnetic interaction between the nanowires.
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State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China
陈文兵
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韩满贵
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周浩
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欧雨
邓龙江
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State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China
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Department of Electrical Engineering,Indian Institute of Technology Kanpur Department of Electrical Engineering,Indian Institute of Technology Kanpur
Sabiq Chishti
Bahniman Ghosh
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Department of Electrical Engineering,Indian Institute of Technology Kanpur
Microelectronics Research Center, Burnet Road, University of Texas at Department of Electrical Engineering,Indian Institute of Technology Kanpur
Bahniman Ghosh
Bhupesh Bishnoi
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Department of Electrical Engineering,Indian Institute of Technology Kanpur Department of Electrical Engineering,Indian Institute of Technology Kanpur
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Department of Electrical Engineering,Indian Institute of Technology KanpurDepartment of Electrical Engineering,Indian Institute of Technology Kanpur
Sabiq Chishti
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Bahniman Ghosh
Bhupesh Bishnoi
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Department of Electrical Engineering,Indian Institute of Technology KanpurDepartment of Electrical Engineering,Indian Institute of Technology Kanpur