Preferentially coordinating tin ions to suppress composition segregation for high-performance tin-lead mixed perovskite solar cells

被引:0
|
作者
Chen, Guocong [1 ,2 ]
Su, Gangsen [1 ]
Zhang, Xusheng [1 ,2 ]
Sun, Qiang [1 ]
Gao, Han [1 ]
Liu, Kaiyuan [1 ]
Li, Hao [1 ]
Wang, Jiafeng [1 ]
He, Dong [1 ]
Ma, Guoqiang [1 ]
Niu, Zeyu [1 ,2 ]
Cheng, Tianle [1 ]
Li, Zhaoning [1 ]
Slater, Peter Raymond [1 ,2 ]
He, Zhubing [1 ]
机构
[1] Southern Univ Sci & Technol, Inst Innovat Mat I2M, Dept Mat Sci & Engn, Shenzhen Key Lab Full Spectral Solar Elect Generat, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China
[2] Univ Birmingham, Sch Chem, Birmingham B15 2TT, England
基金
中国国家自然科学基金;
关键词
Tin-lead mixed perovskite solar cells; Composition segregation; Balanced crystallization; Homogeneous Sn/Pb distribution; SN(II) OXIDATION; CATECHOLATE; FABRICATION; EFFICIENCY;
D O I
10.1016/j.nanoen.2024.110248
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Tin-lead mixed perovskites (TLPs) with a tunable and ideal bandgap exhibit great potential in approaching the Shockley-Queisser limit of power conversion efficiency (PCE). However, two critical issues are necessary to be addressed, including the oxidation of Sn2+ and negligible composition and phase segregation. The latter derives from the unbalanced crystallization rate between Sn- and Pb-based perovskites. Here, we report a strategy to address the above critical issues by introducing 3,4-Dihydroxybenzylamine hydrobromide (DHBABr) in the TLP precursor solution. DHBABr was revealed to promote the crystallization of FAPbI(3) perovskite by suppressing the formation of crystalline DMSO-FA-Pb-I intermediates and retard the crystallization rate of FASnI(3) by preferentially forming a steady amorphous DHBA-FA-Sn-I intermediate. This, therefore, balances the crystallization rate between Sn- and Pb-based perovskites. As a result, the spatial distribution of Sn/Pb ratio is much more uniform across the whole TLP film, which benefits the upscaling of the manufacturing process. Relying on this doping strategy accompanied by the surface passivation with DHBABr, which reduces the defect density of TLP, inhibits the oxidation of Sn2+, and optimizes the band alignment of the device, we have achieved a PCE of 22.44 % with V-oc of 0.853 V and FF of 80.0 %, along with an enhanced long-term stability of T-80 = 476 h under continuously light illumination in the champion device.
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页数:13
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