Modeling influence of temperature and magnetic field on the density of surface states in semiconductor structures

被引：0
|
作者：
Erkaboev, U. I. [1 ]
Sharibaev, N. Yu. [1 ]
Dadamirzaev, M. G. [1 ,2 ]
Rakhimov, R. G. [1 ]
机构：
[1] Namangan Inst Engn & Technol, Namangan 160115, Uzbekistan
[2] Namangan Engn Construct Inst, Namangan 160103, Uzbekistan
来源：
INDIAN JOURNAL OF PHYSICS | 2024年
关键词：
Density of surface states; Magnetic field; Heterostructure; Deep levels; Capacitance-voltage characteristic; P-N-JUNCTION; DEPENDENCE; COEFFICIENT; BARRIER; SI;
D O I：
10.1007/s12648-024-03360-8
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this article, the physical properties of the surface of the CdS/Si(p) material under the influence of a magnetic field were studied. The dependence of the density of surface states of the p-type Si(p) semiconductor on the magnetic field and temperature has been studied. For the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. Mathematical modeling of processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, in the band gap of silicon. The possibility of calculating discrete energy levels is demonstrated.
引用
收藏
页码：1281 / 1288
页数：8
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