Prospect and challenges of borophene bandgap formation: A comprehensive review

被引:0
|
作者
Abdullah, Md. [1 ]
Rahman, Mohammad Saidur [2 ]
Obayedullah, Mohammad [3 ]
Musfika, Sawda Ahmed [4 ]
机构
[1] City Univ, Dept Mech Engn, Savar 1216, Dhaka, Bangladesh
[2] Dhaka Univ Engn & Technol, Dept Mech Engn, Gazipur 1707, Bangladesh
[3] Bangabandhu Sheikh Mujibur Rahman Sci & Technol Un, Dept Civil Engn, Gopalgonj 8100, Bangladesh
[4] Khulna Univ Engn & Technol, Dept Civil Engn, Khulna 9203, Bangladesh
关键词
Borophene; Bandgap formation; Hexagonal lattice; Electronic properties; Materials science;
D O I
10.1016/j.heliyon.2024.e36896
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A two-dimensional crystalline allotrope of boron, Borophene, has attracted much interest lately because of its unique electrical characteristics and possible uses in electronic devices. This thorough analysis examines the opportunities and difficulties related to the bandgap creation in boron, which is essential for its incorporation into semiconductor technologies. An introduction to the structural features of Borophene is given at the outset of the text, emphasizing its fascinating hexagonal lattice and tunable electronic properties. The review thoroughly explores the range of techniques used in synthesizing Borophene, covering both theoretical and experimental methods. It assesses how growth conditions, post-synthesis treatments, and substrate interactions affect the establishment of the bandgap in Borophene. The study also looks at how strain engineering, flaws, and impurities affect the bandgap, highlighting the necessity of exact control over these elements to get desirable electrical properties. We go into great length about the difficulties in Borophene bandgap engineering, including stability, scalability, and repeatability problems. The study critically evaluates the current body of knowledge, pointing out knowledge gaps and suggesting possible directions for further research. In addition, the paper discusses how external elements like humidity and temperature affect the stability of Borophene electrical characteristics, which complicates practical application. To sum up, this thorough analysis offers insightful information about the development of the borophene bandgap formation and a road map for scientists and engineers hoping to utilize borophene to its maximum potential in the future generation of electronic devices. The difficulties in synthesis and the complex interaction of several factors influencing bandgap creation highlight the necessity of ongoing multidisciplinary work to realize the technological potential of borophene.
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页数:15
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