Enhanced optical responsivity in photothermoelectric effect of SnSe-SnSe2 composite at near-infrared band

被引:2
|
作者
Jiang, Hong-Tao [1 ,2 ]
Tian, Hao [1 ]
Sun, Su-Tao [1 ,2 ]
Cao, Lin [1 ]
Yin, Cheng-Hao [1 ,2 ]
Zhou, Xiao-Li [1 ]
Lv, Yang-Yang [1 ,2 ]
Zhou, Jian [1 ]
Yao, Shu-Hua [1 ,3 ,4 ,5 ]
Chen, Y. B. [1 ,2 ]
Chen, Yan-Feng [1 ,3 ,4 ,6 ]
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Jiangsu Key Lab Artificial Funct Mat, Nanjing 210093, Peoples R China
[4] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
[5] Wuhan Inst Technol, Hubei Key Lab Plasma Chem & Adv Mat, Wuhan 430205, Peoples R China
[6] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
THERMOELECTRIC PERFORMANCE; SNSE CRYSTALS;
D O I
10.1063/5.0213002
中图分类号
O59 [应用物理学];
学科分类号
摘要
We experimentally demonstrated that composites, being effective in optimizing the thermoelectric performance, can also enhance photothermoelectric effects in this work. In detail, we employed an alternating-growth in chemical-vapor-transport to grow the SnSe-SnSe2 composite crystals. The photo-responsivities of SnSe-SnSe2 (atomic-weight-ratio as 44%-56%) composite are comparable to SnSe crystals in the visible band (444 and 532 nm). However, the responsivities of SnSe-SnSe2 have remarkable 27.3% enhancement than those of SnSe crystal at the near-infrared band (1310 and 1550 nm). Supported by optical spectroscopy and theoretical electronic band structure, the enhanced optical responsivity of SnSe-SnSe2 composites is due to the formation of P-N junctions at interfaces between SnSe and SnSe2, leading to more optical transition channels and corresponding optical absorptions in near-infrared band. Our work verifies that hetero-junction formed among constituent compounds in composites is effective in optimizing the photothermoelectric response of thermoelectric materials in certain electromagnetic bands, paving the way to develop photoelectric detection devices.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Growth and microstructural characterization of SnSe-SnSe2 composite
    M. R. Aguiar
    R. Caram
    M. F. Oliveira
    C. S. Kiminami
    Journal of Materials Science, 1999, 34 : 4607 - 4612
  • [2] Growth and microstructural characterization of SnSe-SnSe2 composite
    Aguiar, MR
    Caram, R
    Oliveira, MF
    Kiminami, CS
    JOURNAL OF MATERIALS SCIENCE, 1999, 34 (18) : 4607 - 4612
  • [3] OPTICAL BAND-GAP OF THIN-FILMS OF SNSE-SNSE2 EUTECTIC ALLOY
    SIDDIQUI, SS
    DESAI, CF
    THIN SOLID FILMS, 1994, 239 (01) : 166 - 168
  • [4] Band gap and THz optical adsorption of SnSe and SnSe2 nanosheets on graphene: Negative dielectric constant of SnSe
    Mohebbi, Elaheh
    Pavoni, Eleonora
    Pierantoni, Luca
    Stipa, Pierluigi
    Zampa, Gian Marco
    Laudadio, Emiliano
    Mencarelli, Davide
    RESULTS IN PHYSICS, 2024, 57
  • [5] Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect
    袁吉仁
    黄海宾
    邓新华
    梁晓军
    周耐根
    周浪
    Chinese Physics B, 2015, 24 (04) : 525 - 528
  • [6] Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect
    Yuan Ji-Ren
    Huang Hai-Bin
    Deng Xin-Hua
    Liang Xiao-Jun
    Zhou Nai-Gen
    Zhou Lang
    CHINESE PHYSICS B, 2015, 24 (04)
  • [7] Fast near-infrared photodetectors from p-type SnSe nanoribbons
    Li, Long
    Fang, Suhui
    Yu, Ranran
    Chen, Ruoling
    Wang, Hailu
    Gao, Xiaofeng
    Zha, Wenjing
    Yu, Xiangxiang
    Jiang, Long
    Zhu, Desheng
    Xiong, Yan
    Liao, Yan-Hua
    Zheng, Dingshan
    Yang, Wen-Xing
    Miao, Jinshui
    NANOTECHNOLOGY, 2023, 34 (24)
  • [8] High Performance MoTe2/SnSe2 Heterostructure Photodiode for Near-Infrared Photodetection
    Ahn, Jongtae
    APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2024, 33 (06): : 164 - 166
  • [9] Near-infrared enhanced SnO2/SnSe2 heterostructures for room-temperature NO2 detection: Experiments and DFT calculations
    Li, Xi
    Ge, Wanyin
    Wang, Pengtao
    Han, Kuankuan
    Zhao, Hu
    Zhang, Qian
    Diwu, Huating
    Liu, Zhifu
    SENSORS AND ACTUATORS B-CHEMICAL, 2023, 397
  • [10] Broadband and Incident-Angle-Modulation Near-Infrared Polarizers Based on Optically Anisotropic SnSe
    Guo, Zhengfeng
    Gu, Honggang
    Yu, Yali
    Wei, Zhongming
    Liu, Shiyuan
    NANOMATERIALS, 2023, 13 (01)