Heterointerface Effects on Carrier Dynamics in Colloidal Quantum Dots and Their Application to Light-Emitting Diodes

被引:0
|
作者
Kim, Sung Hun [1 ]
Kim, Ji-Yeon [2 ]
Son, Dong Ick [2 ,3 ]
Lee, Hong Seok [1 ]
机构
[1] Jeonbuk Natl Univ, Res Inst Phys & Chem, Dept Phys, Jeonju 54896, South Korea
[2] Korea Inst Sci & Technol, Inst Adv Composite Mat, Jeonbuk 55324, South Korea
[3] Univ Sci & Technol, Dept Nanomat & Nano Sci, Daejeon 34113, South Korea
基金
新加坡国家研究基金会;
关键词
colloidal quantum dots; core-shell heterostructures; heterointerface effects; wavelength dependent time-resolvedphotoluminescence; quantum dot light-emitting diodes; SEMICONDUCTOR NANOCRYSTALS; PHOTOPHYSICS;
D O I
10.1021/acsami.4c01325
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Colloidal quantum dots (QDs) are promising candidates for next-generation display technology because of their unique optical properties and have already appeared in the market as a high-end product. On the basis of their extraordinary properties, QD emissions with a given chemical composition can be tailored in a wide spectral window due to quantum size effects, which constitutes a key advantage of QDs in the display field. Specifically, investigations of structure-dependent and composition-dependent characterizations outside the quantum confinement effect have become an important part of practical applications. Therefore, from the perspective of designing nanostructures with well-defined heterointerfaces, strong quantum confinement effects with effective carrier confinement are desirable. Our results show that the photoluminescence (PL) intensity of CdSe/CdZnS core-shell QDs was enhanced 5.7 times compared with that of the CdSe core QDs. Supplementary analytical techniques involving transmission electron microscopy revealed the heterointerface configuration and composition distribution of the core and shell materials. The effects of the heterointerface on carrier dynamics in core-shell QDs were revealed by monitoring wavelength-dependent time-resolved PL. To further develop the QD light-emitting diodes (QD-LEDs), we produced an all-solution processed inverted QD-LEDs using CdSe/CdZnS core-shell QDs as the emitter. The electroluminescence spectrum of deep-red emissive QD-LEDs with CIE chromaticity coordinates of (0.68, 0.32) exhibited a peak at 638 nm.
引用
收藏
页码:25511 / 25518
页数:8
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