Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations

Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice distortion at the TDs, we demonstrate that penetrating pores along TDs can be formed in both p - and n -type heteroepitaxial Ge layers through a preferential etching. It has been found that the preferential etching at TD sites takes place in the porosification process of Geon-Si samples and is independent of the doping type and concentration. The penetrating pores follow the path of the TD lines and can penetrate the entire Ge layer of 1.3 mu m to further porosificate the Si substrate. The effects of anodic current density and total etching duration have been thoroughly investigated on forming penetrating pores at TD sites. The dissolution mechanism in the porosification process has been revealed by dissolution valence calculation and recorded potential curves. Our findings shed light on Ge perforation in both p - and n -type Ge-on-Si and show great potential in Si -based integrated photonics and microelectronics.