This investigation details the synthesis and comprehensive characterization of semiconducting bismuth sulfobromide (BiSBr) crystals, emphasizing their structural and optoelectronic properties. Using the BridgmanStockbarger technique, we synthesized large, high-quality BiSBr crystals, which were systematically examined through techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. These methods confirmed the crystals' quasi-one-dimensional structure and their exceptional stability, demonstrating an absence of surface oxidation, which is a significant advantage for optoelectronic applications. The study establishes a correlation between the crystals' unique structural characteristics and their enhanced optoelectronic properties, particularly regarding light absorption and thermal conductivity, thereby underscoring their potential in sustainable energy technologies. This work not only advances our understanding of BiSBr as a promising material for optoelectronic devices, but also paves the way for future research into its practical applications in energy conversion and storage systems.