2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects

被引:0
|
作者
Leblanc, Chloe [1 ]
Song, Seunguk [1 ]
Jariwala, Deep [1 ]
机构
[1] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA
基金
新加坡国家研究基金会;
关键词
2D Semiconductors; Ferroelectricity; 2D Nanoelectronics; Neuromorphic computing; Emerging memory devices; Non-volatile memory; FeFETs; FTJ; Ferrodiode; FIELD-EFFECT TRANSISTORS; ROOM-TEMPERATURE FERROELECTRICITY; NEGATIVE CAPACITANCE; HIGH-MOBILITY; MEMORY; FILMS; CIRCUIT; NETWORK; ELEMENT;
D O I
10.1016/j.cossms.2024.101178
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc. In this Perspective, we investigate the research topics where 2D semiconductors and ferroelectric materials both in 2D or 3D form come together. 2D semiconductors have unique attributes due to their van der Waals nature that permits their facile integration with any other electronic or optical materials. In addition, the emergence of ferroelectricity in 2D monolayers, multilayers, and artificial structures offers further advantages since traditionally ferroelectricity has been difficult to achieve in highly thickness scaled materials. Further, we elaborate on the applications of 2D materials + ferroelectricity in non-volatile memory devices, highlighting their potential for in-memory computing, neuromorphic computing, optoelectronics, and spintronics. We also suggest the challenges posed by both ferroelectrics and 2D materials, including material/device preparation and reliable characterizations, to drive further investigations at the interface of these important classes of electronic materials.
引用
收藏
页数:16
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