Directed Self-Assembly: PS-b-PMMA Materials Readiness and High-chi platforms for Extended Geometry Scaling

The evolution of the photolithographic model has enabled the semiconductor industry to achieve enhanced device efficiency within the consumer electronics domain through the ability to create diminutive shapes and sizes. This historical progression can be delineated into six discernible periods, all of which are based on fundamental elements of a light source and a lens: broadband, i-line, KrF (248 nm), dry ArF (193 nm), immersion (193 nm), and the present environment belonging to the dynamic and evolving Extreme Ultraviolet (EUV) generation (13.5 nm). Accompanied by this evolution, three supplementary patterning modalities have synergistically evolved to augment and extend the capacities of the lithographic approaches: Reactive Ion Etching (RIE), Chemical Mechanical Planarization (CMP) and Atomic Layer Deposition (ALD). The current EUV generation presents unique scaling challenges such as overlay discrepancies, critical dimension (CD) variance, and EUV exposure capacity limitations. To mitigate these scaling impediments and continue the miniaturization trajectory, Directed Self-Assembly (DSA) represents the nascent fourth era of complimentary patterning. DSA has the potential to tackle the foremost triad of scaling challenges pervading the contemporary industry landscape. In this discourse, we shall explain the profound role of DSA in the future of semiconductor fabrication. Specifically, we will critically assess the readiness to produce DSA materials and their potential for continued extension beyond the existing PS-b-PMMA generation platform.