Strain-induced shape transition of VSi2 clusters on Si(111)

We investigated the growth and shape of vanadium silicide clusters on Si(111) using scanning tunneling microscopy, atomic force microscopy and scanning electron microscopy. The deposition of 8 monolayers of vanadium on Si(111) and subsequent annealing at 1200 K leads to the formation of large elongated VSi2 clusters. This is in marked contrast to the deposition of submonolayer amounts of V where the VSi2 islands have a compact shape. The shape transition can be explained by a competition between edge formation and strain relaxation energy terms. The VSi2 clusters, which are aligned along the three high symmetry directions of the Si(111) surface and surrounded by a denuded zone, form a two-dimensional network.