Anomalous TID Susceptibility on Collector Bias for SOI High-Voltage Polysilicon Emitter Bipolar Transistors

被引：0

作者：

Wei, Jianan ^{[1
]}

Qiu, Sheng ^{[2
,3
]}

Fu, Jing ^{[1
]}

Fu, Xiaojun ^{[1
]}

Liu, Qing ^{[4
]}

Zhang, Xiaolei ^{[5
]}

Luo, Ting ^{[1
]}

Su, Tao ^{[6
]}

Zhu, Kunfeng ^{[4
]}

Huang, Lei ^{[4
]}

Zhang, Tingwei ^{[7
]}

Yang, Jianqun ^{[8
]}

Yang, Yonghui ^{[2
]}

Li, Xingji

Zhang, Peijian ^{[1
]}

机构：

[1] Natl Key Lab Integrated Circuits & Microsyst, Chongqing 400060, Peoples R China

[2] Sichuan Inst Solid State Circuits, Chongqing 400060, Peoples R China

[3] Univ Elect Sci & Technol China, Sch Integrated Circuit Sci & Engn, Chengdu 610054, Peoples R China

[4] Chongqing Semichip Elect Co Ltd, Chongqing 401332, Peoples R China

[5] Chongqing Univ Posts & Telecommun, Sch Optoelect Engn, Chongqing 400065, Peoples R China

[6] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[7] China Acad Space Technol, Beijing 100094, Peoples R China

[8] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 07期

基金：

中国国家自然科学基金;

关键词：

High-voltage techniques; Noise; Degradation; 1/f noise; Transistors; Junctions; Bipolar transistors; Collector bias effect; high-voltage bipolar transistor; hole transport; total ionizing dose (TID); 1/F NOISE; DOSE-RATE; BORDER TRAPS; CHARGE YIELD; IRRADIATION; DEPENDENCE; DEFECTS; IMPACT;

D O I：

10.1109/TED.2024.3403984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of collector-to-emitter bias on the total ionizing dose (TID) response of high-voltage ( BVCEO > 30 V) NPN bipolar junction transistors on thick-film silicon-on-insulator (SOI) technology is investigated using 10-keV X-rays. The radiation-induced base current increase in forward mode shows independence on collector bias condition during irradiation. However, the excess base current in the inverse mode is significantly suppressed under high collector-to-emitter bias condition in the irradiation procedure. TID irradiation-induced electric degradation behaviors and the corresponding 1/f noise characteristics reveal that the previously irradiation created traps responsible for device degradation cannot be removed by the high collector voltage. The observed collector bias effect can be attributed to the field-assisted migration of holes captured by shallow oxide traps.

引用

页码：4033 / 4038

页数：6

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