A Novel Ferroelectric FET Based Universal Content Addressable Memory With Reconfigurability for Area- and Energy-Efficient In-Memory-Searching System

被引:0
|
作者
Xu, Weikai [1 ]
Luo, Jin [1 ]
Chen, Zerui [1 ]
Fu, Boyi [1 ]
Fu, Zhiyuan [1 ]
Wang, Kaifeng [1 ]
Huang, Qianqian [2 ]
Huang, Ru [2 ]
机构
[1] Peking Univ, Sch Integrated Circuits, Beijing Adv Innovat Ctr Integrated Circuits, Beijing 100871, Peoples R China
[2] Chinese Inst Brain Res, Beijing 102206, Peoples R China
关键词
Content addressable memory; ferroelectric FET; memory-augmented neural network; in-memory-searching;
D O I
10.1109/LED.2024.3406042
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, a novel ferroelectric FET (FeFET)-based universal content addressable memory (UCAM) is proposed and experimentally demonstrated for the first time. By utilizing the non-volatile multilevel ferroelectric polarization for entry storage and the contrary monotonicity of N-type and P-type FeFETs for query searching, the reconfigurable UCAM enables binary CAM, ternary CAM, multibit CAM and analog CAM modes without the need of extra circuit to generate complementary "0/1", multilevel or analog search signals of twin branches in different CAM modes. Moreover, based on the proposed UCAM design, a novel interpretable and configurable tree-based hierarchical search for memory-augmented neural network (MANN) is further demonstrated with the higher accuracy (95%) of mixed pattern recognition tasks and the lower search energy consumption compared with conventional CAM-based MANN, providing a promising approach for area- and energy-efficient data-centric in-memory-searching system.
引用
收藏
页码:1345 / 1348
页数:4
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