Tuning the metal-insulator transition temperature by the controlled generation of oxygen vacancies on La 0.7 Ca 0.3 MnO 3-x epitaxial thin films

This report presents a study on the effect of the controlled generation of oxygen vacancies on the electronic transport properties of La 0.7 Ca 0.3 MnO 3-x epitaxial thin films. Oxygen defects cause significant changes in the crystalline structure of mixed-valence manganites and lower the Mn valence, resulting in a shift of the metalinsulator transition to lower temperatures due to modifications in the angles and lengths of Mn -O bonds. Experiments using Polarized Extended X -Ray Absorption Fine Structure Spectroscopy have provided strong evidence that oxygen vacancies are mainly formed in the basal plane of the MnO 6 octahedra. The accurate control of oxygen vacancies generation opens possibilities for managing and enhancing the magneto-electronic properties of epitaxial manganite thin films with potential in industrial applications.