Comprehensive time dependent dielectric breakdown (TDDB) characterization of ferroelectric capacitors under bipolar stress conditions

被引：0

作者：

Ravikumar, Priyankka Gundlapudi ^{[1
]}

Ravindran, Prasanna Venkatesan ^{[1
]}

Aabrar, Khandker Akif ^{[1
]}

Song, Taeyoung ^{[1
]}

Kirtania, Sharadindu Gopal ^{[1
]}

Das, Dipjyoti ^{[1
]}

Park, Chinsung ^{[1
]}

Afroze, Nashrah ^{[1
]}

Tian, Mengkun ^{[2
]}

Yu, Shimeng ^{[1
]}

Islam, Ahmad Ehtesham ^{[3
]}

Datta, Suman ^{[1
,4
]}

Mahapatra, Souvik ^{[5
]}

Khan, Asif ^{[1
,4
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Inst Mat, Atlanta, GA USA

[3] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH USA

[4] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[5] Indian Inst Technol, Dept Elect Engn, Mumbai, Maharashtra, India

来源：

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 | 2024年

关键词：

HfO2 based Ferroelectrics; Ferroelectric TDDB; Bipolar field stress;

D O I：

10.1109/IRPS48228.2024.10529414

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we report the first comprehensive time-dependent dielectric breakdown (TDDB) study on ultra-thin HfO2-based ferroelectric under bipolar stress conditions. Here, field cycling is done on 7 nm Hf0.5Zr0.5O2 (HZO) capacitors at different temperatures and bipolar stress fields. Despite involving polarization switching and associated large internal electric fields, bipolar cycling of ferroelectric HZO is shown to exhibit similar time-dependent dielectric breakdown acceleration trends to that of traditional dielectrics like SiO2. Notably, the temperature acceleration of time-dependent dielectric breakdown shows a linear dependence on the stress field similar to SiO2. Further, the field acceleration of time-dependent dielectric breakdown in ferroelectric HZO, while exhibiting functionally similar temperature dependence to that of SiO2, demonstrates considerably greater sensitivity to temperature.

引用

页数：5

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