Shedding light on evolution of Raman line shape with probing laser power: Light-induced perturbation in electron-phonon coupling

被引:2
|
作者
Rambadey, Omkar V. [1 ]
Kumar, Kailash [1 ]
Nain, Ritu [1 ]
Kumar, Anil [1 ,2 ]
Sagdeo, Pankaj R. [1 ]
Chamberlin, Philip M. [3 ]
Adu, Kofi W. [4 ,5 ]
机构
[1] Indian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
[2] Indian Inst Technol Kanpur, Dept Phys, Kanpur 208016, India
[3] Penn State Univ, Altoona Coll, Dept Math, Altoona, PA 16601 USA
[4] Penn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
[5] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
来源
JOURNAL OF CHEMICAL PHYSICS | 2024年 / 161卷 / 03期
关键词
TEMPERATURE-DEPENDENCE; OPTICAL-PROPERTIES; ABSORPTION-EDGE; FANO RESONANCE; SCATTERING; SILICON; SPECTROSCOPY; SPECTRA; CONFINEMENT; EMISSION;
D O I
10.1063/5.0189327
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The laser power mediated changes in the Raman line shape have been considered in terms of interference between discrete phonon states |rho > and the electronic continuum states |kappa > contributed by Urbach tail states. The laser-induced effects are treated in terms of the increase in the surface temperature and thereby the scaling of electronic disorder, i.e., Urbach energy, which can further contribute to the electron-phonon interactions. Therefore, the visualization of this effect is attempted analytically as a perturbation term in the Hamiltonian, which clearly accounts for the observed changes with laser power. This has been investigated based on the experimental results of laser power dependent Raman spectra of bulk EuFeO3 and silicon nanowires, which are found to provide convincing interpretations.
引用
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页数:15
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