Shedding light on evolution of Raman line shape with probing laser power: Light-induced perturbation in electron-phonon coupling
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作者:
Rambadey, Omkar V.
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Indian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, IndiaIndian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
Rambadey, Omkar V.
[1
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Kumar, Kailash
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Indian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, IndiaIndian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
Kumar, Kailash
[1
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Nain, Ritu
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Indian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, IndiaIndian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
Nain, Ritu
[1
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Kumar, Anil
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Indian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
Indian Inst Technol Kanpur, Dept Phys, Kanpur 208016, IndiaIndian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
Kumar, Anil
[1
,2
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Sagdeo, Pankaj R.
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Indian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, IndiaIndian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
Sagdeo, Pankaj R.
[1
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Chamberlin, Philip M.
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Penn State Univ, Altoona Coll, Dept Math, Altoona, PA 16601 USAIndian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
Chamberlin, Philip M.
[3
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Adu, Kofi W.
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Penn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
Penn State Univ, Mat Res Inst, University Pk, PA 16802 USAIndian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
Adu, Kofi W.
[4
,5
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机构:
[1] Indian Inst Technol Indore, Dept Phys, Mat Res Lab, Khandwa Rd, Indore 453552, India
[2] Indian Inst Technol Kanpur, Dept Phys, Kanpur 208016, India
[3] Penn State Univ, Altoona Coll, Dept Math, Altoona, PA 16601 USA
[4] Penn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
[5] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
The laser power mediated changes in the Raman line shape have been considered in terms of interference between discrete phonon states |rho > and the electronic continuum states |kappa > contributed by Urbach tail states. The laser-induced effects are treated in terms of the increase in the surface temperature and thereby the scaling of electronic disorder, i.e., Urbach energy, which can further contribute to the electron-phonon interactions. Therefore, the visualization of this effect is attempted analytically as a perturbation term in the Hamiltonian, which clearly accounts for the observed changes with laser power. This has been investigated based on the experimental results of laser power dependent Raman spectra of bulk EuFeO3 and silicon nanowires, which are found to provide convincing interpretations.
机构:
Anhui Normal Univ, Dept Phys, Wuhu 241000, Anhui, Peoples R China
Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China
Univ Sci & Technol China, Hefei Natl Lab, Hefei 230088, Anhui, Peoples R ChinaAnhui Normal Univ, Dept Phys, Wuhu 241000, Anhui, Peoples R China
机构:
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Garcia, D. R.
Lanzara, A.
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Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA