Enabling robust broad-spectrum photodetection with ultra-high responsivity through vapor growth of 2D all-inorganic lead-free Cs2SnI6 perovskites

被引:1
|
作者
Xie, Jun [1 ]
Zhao, Mei [1 ]
Dong, Youqing [1 ]
Zou, Chao [1 ]
Pan, Shuang [1 ]
Xu, Quanlong [1 ]
Yang, Yun [1 ]
Wang, Shun [1 ,2 ]
Zhang, Lijie [1 ,2 ]
机构
[1] Wenzhou Univ, Coll Chem & Mat Engn, Key Lab Carbon Mat Zhejiang Prov, Wenzhou 325000, Peoples R China
[2] Zhejiang Engn Res Ctr Electrochem Energy Mat & Dev, Inst New Mat & Ind Technol, Wenzhou 325000, Peoples R China
基金
中国国家自然科学基金;
关键词
2DCs2SnI6; All-inorganic lead-free perovskites; Ultra-high responsivity; Broadband photodetectors; HETEROSTRUCTURES; PHOTODIODES; FILMS; BAND;
D O I
10.1016/j.optmat.2024.115561
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The all-inorganic lead-free perovskite Cs 2 SnI 6 has gained considerable research attention due to its outstanding characteristics, including non-toxicity, robust stability, and superior photoelectric performance. In this research, we employed a simple yet robust chemical vapor deposition technique to successfully grow ultra-thin 2D Cs 2 SnI 6 flakes on a mica substrate, achieving a minimal thickness of just 8 nm and a significant lateral size of up to 48 jim. The obtained 2D Cs 2 SnI 6 flakes displayed an extended photoluminescent lifetime of approximately 1.44 ns and exceptional stability, maintaining their crystal structure intact over a period of 60 days. The photodetectors fabricated from Cs 2 SnI 6 flakes demonstrated a broad ultraviolet to near-infrared response range (365 -1342 nm), with a responsivity of up to 6.25 x 10 5 A W -1 . They additionally displayed rapid rise and decay times of 31.32 ms and 72.42 ms, respectively, with an external quantum efficiency reaching as high as 1.92 x 10 6 %, and a detectivity achieving 1.27 x 10 11 Jones. This research serves as a critical step forward in enabling the facile yet robust synthesis of stable, all-inorganic ultra-thin lead-free perovskites, paving the way for innovation in environmentally friendly optoelectronic devices.
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页数:9
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