Optoelectronically controlled spin-valley filter and nonlocal switch based on an asymmetrical silicene magnetic superconducting heterostructure

被引:1
|
作者
Ma, Shuo [1 ,2 ]
Zhang, Hongmei [3 ,4 ]
Liu, Jianjun [1 ,2 ,5 ]
Liu, De [1 ]
机构
[1] Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
[2] Hebei Normal Univ, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
[3] Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Peoples R China
[4] Hebei Univ Sci & Technol, Hebei Key Lab Photoelect Control Surface & Interfa, Shijiazhuang 050018, Peoples R China
[5] Shijiazhuang Univ, Dept Phys, Shijiazhuang 050035, Peoples R China
基金
中国国家自然科学基金;
关键词
CROSSED ANDREEV REFLECTION; MAGNETORESISTANCE; TRANSPORT;
D O I
10.1063/5.0207076
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the effects of the circularly polarized light (CPL) and the electric field (EF) on the nonlocal transport in a silicene-based antiferromagnet/superconductor/ferromagnet (AF/S/F) asymmetrical junction. For case I (II), the CPL and the EF are applied simultaneously in the antiferromagnetic (ferromagnetic) region, whereas in the ferromagnetic (antiferromagnetic) region, only a constant EF is considered. The spin-valley-resolved conductance can be turned on or off by adjusting the CPL or the EF. The AF/S/F junction can be manipulated as a spin-locked valley filter for case I, while for case II, it can be used not only as a valley-locked spin filter but also as a nonlocal switch between two pure nonlocal processes. Such interesting nonlocal switch effect can be effectively controlled by reversing the direction of the incident energy axis, the handedness of the CPL, or the direction of the EF. These findings may open an avenue to the design and manufacture of the spintronic and valleytronic devices based on the asymmetrical silicene magnetic superconducting heterostructure.
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页数:14
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