Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

Investigation of germanium gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with Al2O3 dielectric layer has been successfully performed. The device demonstrates a normally-on characteristics, whose maximum drain-source current density, threshold voltage, maximum transconductance, on/off ratio, subthreshold swing, capacitance, carrier density, saturation carrier mobility, fixed charge density and interface state density are of -37.3 mA/mm, 0.22 V, 6.42 mS/mm, 10(8), 134 mV/dec, 0.33 mu F/cm(2), 9.83 x 10(12) cm(-2), 97.9 cm(2)/V<middle dot>s, 7.63 x 10(12) cm(-2) and 2.56 x 10(12) cm(-2)<middle dot>eV(-1), respectively. This work is significant to the development of H-terminated diamond FET.