Enhancing Design Robustness Accounting for Process Variations of Multi-transistor Designs

被引:0
|
作者
Mandal, Ajoy [1 ]
机构
[1] Texas Instruments Inc, Bengaluru, Karnataka, India
关键词
Mixed transistor design closure; Process variations; Transistor skew;
D O I
10.1109/EDTM58488.2024.10512316
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiconductor device performance is impacted by variations in the manufacturing process. Modeling of such variations in the design process and accounting for their impact on chip timing and electrical specs is key to ensuring high yielding parts post manufacturing. Circuits created with multiple transistor types require to comprehend the interdependencies between variations of different transistors. In this paper we discuss about challenges related to handling of such variations in design closure process of integrated circuits involving multiple transistor types.
引用
收藏
页码:795 / 797
页数:3
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