Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials

被引:0
|
作者
Gao, Hongze [1 ]
Wang, Zifan [1 ]
Cao, Jun [1 ]
Lin, Yuxuan Cosmi [2 ]
Ling, Xi [1 ,3 ]
机构
[1] Boston Univ, Dept Chem, Boston, MA 02215 USA
[2] Texas A&M Univ, Dept Mat Sci & Engn, 575 Ross St, College Stn, TX 77843 USA
[3] Boston Univ, Div Mat Sci & Engn, 15 St Marys St, Boston, MA 02215 USA
基金
美国国家科学基金会;
关键词
2D materials; non-vdW materials; 2D electronicdevices; 2D heterostructures; 2D materials synthesis; 2D transistors; band structure modifications; 2D dielectrics; FIELD-EFFECT TRANSISTORS; SINGLE-PHOTON EMITTERS; 2-DIMENSIONAL MATERIALS; DIELECTRIC-BREAKDOWN; MOS2; GROWTH; TRANSITION; GRAPHENE; PERFORMANCE; MECHANISMS;
D O I
10.1021/acsnano.4c01177
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Extending the inventory of two-dimensional (2D) materials remains highly desirable, given their excellent properties and wide applications. Current studies on 2D materials mainly focus on the van der Waals (vdW) materials since the discovery of graphene, where properties of atomically thin layers have been found to be distinct from their bulk counterparts. Beyond vdW materials, there are abundant non-vdW materials that can also be thinned down to 2D forms, which are still in their early stage of exploration. In this review, we focus on the downscaling of non-vdW materials into 2D forms to enrich the 2D materials family. This underexplored group of 2D materials could show potential promise in many areas such as electronics, optics, and magnetics, as has happened in the vdW 2D materials. Hereby, we will focus our discussion on their electronic properties and applications of them. We aim to motivate and inspire fellow researchers in the 2D materials community to contribute to the development of 2D materials beyond the widely studied vdW layered materials for electronic device applications. We also give our insights into the challenges and opportunities to guide researchers who are desirous of working in this promising research area.
引用
收藏
页码:16343 / 16358
页数:16
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