Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes

被引：0

作者：

Mateos, J. ^{[1
,2
]}

Garcia-Sanchez, S. ^{[1
,2
]}

Abou Daher, M. ^{[3
]}

Lesecq, M. ^{[3
]}

Huo, L. ^{[4
]}

Lingaparthi, R. ^{[4
]}

Nethaji, D. ^{[4
]}

Radhakrishnan, K. ^{[4
]}

Iniguez-de-la-Torre, I. ^{[1
,2
]}

Vasallo, B. G. ^{[1
,2
]}

Perez, S. ^{[1
,2
]}

Gonzalez, T. ^{[1
,2
]}

机构：

[1] Univ Salamanca, Dept Appl Phys, Salamanca, Spain

[2] Univ Salamanca, USAL NANOLAB, Salamanca, Spain

[3] Univ Lille, IEMN, CNRS, Univ Polytec Hauts de France,UMR 8520, F-59000 Lille, France

[4] Nanyang Technol Univ, Temasek Labs, CINTRA, Singapore 637553, Singapore

来源：

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年

关键词：

GaN; Gunn diode; THz sources; OSCILLATIONS;

D O I：

10.1109/EDTM58488.2024.10512176

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gunn oscillations are expected to appear in GaN at high electric fields due to its negative differential mobility, but they have never been observed experimentally due to the large voltages to be applied. We propose a way to avoid such practical problems by fabricating planar Gunn diodes with shaped nanochannels which allow to reduce the total DC current and focus the electric field in regions far from the contacts.

引用

页码：732 / 734

页数：3

共 18 条

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