Study on grinding of Cu-Ta interface based on molecular dynamic

In this work, the molecular dynamics method is used to simulate the process of particle scratching, so as to reveal the microscopic mechanism of scratch formation, and characterize the stress distribution and microscopic interface changes of the Cu/Ta interface during the particle grinding process. Due to different etching processes, different types of distributions will be formed at the Cu/Ta interface between the interconnection metal and the barrier layer. Further, the stress-strain distribution of different types of Cu/Ta interfaces in the mechanical grinding process is studied to reveal the possible failure modes of Cu/Ta interfaces with different distributions. The results of this simulation will be beneficial to reduce the interface damage of the multilayer copper interconnection structure caused by particle scratches during the CMP process, reduce the defects caused by the CMP process, and improve the reliability of the multilayer copper interconnection structure.