Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

被引：4

作者：

Han, Hecheng ^{[1
]}

Zhang, Baoqing ^{[1
]}

Zhang, Zihao ^{[1
]}

Wang, Yiming ^{[1
]}

Liu, Chuan ^{[2
]}

Singh, Arun Kumar ^{[3
]}

Song, Aimin ^{[4
,5
]}

Li, Yuxiang ^{[1
]}

Jin, Jidong ^{[6
]}

Zhang, Jiawei ^{[1
]}

机构：

[1] Shandong Univ, Sch Integrated Circuit, Shandong Technol Ctr Nanodevices & Integrat, Jinan 250101, Peoples R China

[2] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

[3] Punjab Engn Coll Deemed Univ, Dept Elect & Commun Engn, Chandigarh 160012, India

[4] Univ Manchester, Dept Elect & Elect Engn, Manchester M13 9PL, England

[5] Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China

[6] Hanyang Univ, Dept Photon & Nanoelect, Ansan 15588, South Korea

来源：

NANO LETTERS | 2024年 / 24卷 / 28期

基金：

中国国家自然科学基金;

关键词：

weak light detection; asymmetric structure; self-driven photodetection; light-triggered anti-ambipolartransistors; HETEROJUNCTION;

D O I：

10.1021/acs.nanolett.4c01679

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 x 10(14) Jones) under 635 nm illumination with a low power density of 0.23 mu W/cm(2), promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.

引用

页码：8602 / 8608

页数：7