High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-Reflection Design

被引：1

作者：

Dong, Yazhou ^{[1
]}

Zhou, Tianchi ^{[1
]}

Liang, Shixiong ^{[2
]}

Gu, Guodong ^{[2
]}

Zhou, Hongji ^{[1
]}

Yu, Jianghua ^{[1
]}

Guo, Hailong ^{[1
]}

Zhang, Yaxin ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

[2] Hebei Semicond Res Inst, Natl Key Lab Solid State Microwave Devices & Circu, Shijiazhuang 050051, Peoples R China

来源：

CHINESE JOURNAL OF ELECTRONICS | 2024年 / 33卷 / 05期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

Couplings; Schottky diodes; Design methodology; Schottky barriers; Terahertz materials; Power system harmonics; Reflection; Gallium nitride; Frequency doubler; Multi-objective optimization; Local non-reflection design; FREQUENCY DOUBLER; RADAR;

D O I：

10.23919/cje.2023.00.179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The study focuses on the development of gallium nitride (GaN) Schottky barrier diode (SBD) frequency doublers for terahertz technology. The low conversion efficiency of these doublers limits their practical applications. To address this challenge, the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure. The method aims to improve the coupling efficiency of input power and reduce the reflection of power output. Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers, achieving an efficiency of 16.9% and a peak output power of 160 mW at 175 GHz. These results suggest that the method can contribute to the further development of GaN SBD frequency doublers for terahertz technology.

引用

页码：1196 / 1203

页数：8

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