Irradiation characteristics of nanosecond laser on silicon under vacuum conditions

被引:0
|
作者
Guo, Ming [1 ]
Zhang, Yong-xiang [2 ]
Li, Nan [1 ]
Li, Hong [1 ]
Zhang, Si-qi [1 ]
Cai, Ji-xing [3 ]
机构
[1] Jilin Engn Normal Univ, Inst Interdisciplinary Quantum Informat Technol, Jilin Engn Lab Quantum Informat Technol, Changchun 130052, Peoples R China
[2] Changchun Inst Elect Sci & Technol, Sch Optoelect Sci & Engn, Changchun, Peoples R China
[3] Changchun Univ Sci & Technol, Jilin Key Lab Solid state Laser Technol & Applicat, Changchun, Peoples R China
关键词
Vacuum; Silicon; Nanosecond laser; Irradiation; ABLATION;
D O I
10.1007/s12648-024-03266-5
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
To investigate the influence of the vacuum environment on the near-infrared nanosecond pulse laser irradiation of silicon materials, irradiation effects such as the distribution and evolution of the microstructure, as well as the erosion morphology of silicon under various vacuum levels, are investigated. The experimental results show that when the laser energy density is low, silicon's temperature rises and volume expands due to the laser energy absorption, resulting in thermal stress within the irradiation area and the appearance of cracks on the surface. As the laser energy density increases, a molten pit appears at the ablation center, and the size of the molten pit increases with the energy density, resulting in a significant increase in the damaged area. The damage diameter decreases with the vacuum level. However, the effect of vacuum level on the damage diameter is not significant when the excitation energy density is low. The damage area of monocrystalline silicon increases approximately linearly with the laser repetition rate. Laser absorption is primarily Finier absorption in high vacuum conditions, whereas reverse toughening absorption is predominant in low vacuum conditions. This study can be used as a reference for surface treatment, drilling, and development of new monocrystalline silicon materials.
引用
收藏
页码:259 / 264
页数:6
相关论文
共 50 条
  • [1] Influences of Initial Surface Conditions on Response Characteristics of Amorphous Silicon Films to Nanosecond Laser Irradiation
    Ren, Yingming
    Zhang, Zhiyu
    MICROMACHINES, 2021, 12 (07)
  • [2] On the dynamic behaviors of silicon single crystal under nanosecond laser irradiation
    Liu, Q. Y.
    Zhou, J.
    Zhao, Y. W.
    Xiong, L. C.
    Shi, T. L.
    Long, Y. H.
    COMPUTATIONAL MATERIALS SCIENCE, 2019, 160 : 420 - 429
  • [3] Laser-induced damage threshold of silicon under combined millisecond and nanosecond laser irradiation
    Lv, Xueming
    Pan, Yunxiang
    Jia, Zhichao
    Li, Zewen
    Zhang, Hongchao
    Ni, Xiaowu
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (11)
  • [4] Laser-induced damage threshold of silicon under combined millisecond and nanosecond laser irradiation
    Li, Z. (lizewen@mail.njust.edu.cn), 1600, American Institute of Physics Inc. (121):
  • [5] THE SPECIFICITIES OF SILICON LAYER CRYSTALLIZATION ON THERMALLY ISOLATED SUBSTRATES UNDER NANOSECOND LASER IRRADIATION
    BATISHCHE, SA
    DEMCHUK, AV
    KUZMUK, AA
    TATUR, GA
    DOKLADY AKADEMII NAUK BELARUSI, 1989, 33 (12): : 1084 - 1086
  • [6] Evaluation of explosive sublimation as the mechanism of nanosecond laser ablation of tungsten under vacuum conditions
    Oderji, Hassan Yousefi
    Farid, Nazar
    Sun, Liying
    Fu, Cailong
    Ding, Hongbin
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2016, 122 : 1 - 8
  • [7] Properties of conical microstructures formed on silicon surfaces via nanosecond laser ablation under vacuum
    Ji-Hong Zhao
    Chun-Hao Li
    Jian-Nan Wang
    Optical and Quantum Electronics, 2016, 48
  • [8] Properties of conical microstructures formed on silicon surfaces via nanosecond laser ablation under vacuum
    Zhao, Ji-Hong
    Li, Chun-Hao
    Wang, Jian-Nan
    OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (01) : 1 - 7
  • [9] Investigation of flashover characteristics under nanosecond pulse in vacuum
    Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100080, China
    不详
    Gaodianya Jishu, 2006, 4 (58-61):
  • [10] Optical pyrometry of a silicon surface melted by nanosecond laser irradiation
    Ivlev, G. D.
    Technical Physics Letters, 22 (06):