Perspective Roadmap of Advanced HfO2-based Ferroelectric Field Effect Transistors

被引：0

作者：

De, Sourav ^{[1
]}

Cho, Chen-Yi ^{[1
]}

Ali, Tarek ^{[2
]}

Banerjee, Writam ^{[2
]}

Ramirez, Lucia Perez ^{[3
]}

Barrett, Nick ^{[3
]}

Majumder, Sayani ^{[4
]}

Hou, Tuo-Hung ^{[1
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Hsinchu, Taiwan

[2] GlobalFoundries Dresden Module One, D-01109 Dresden, Germany

[3] Univ Paris Saclay, CNRS, SPEC, CEA,CEA Saclay, Gif Sur Yvette, France

[4] Tampere Univ, Informat Technol & Commun Sci, Tampere, Finland

来源：

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年

关键词：

Hafnium Oxide; FeFET; FeRAM; FeFinFET; Advanced FeFETs; SCM; CIM;

D O I：

10.1109/EDTM58488.2024.10511366

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The discovery of ferroelectricity in hafnium oxide (HfO2) has proved to be a game changer in the potential applications of ferroelectric non-volatile memories (NVM) in mainstream electronics. This paper discusses the present status, potential, and challenges facing ferroelectric field effect transistor (FeFET) memories and sketches promising technology evolution for the next decade and the most exciting applications.

引用

页码：511 / 513

页数：3

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