Strain and defect engineering of high-performance monolayer two-dimensional material/Ag nanoparticles optoelectronic FET sensor through multiple laser shock

被引:2
|
作者
Huang, Zheng [1 ]
Xu, Shuoheng [1 ]
Zhang, Zequn [1 ]
Wang, Zifeng [1 ]
Si, Mengwei [2 ]
Hu, Yaowu [1 ,3 ]
机构
[1] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
[2] Shanghai Jiao Tong Univ, Dept Elect Engn, Shanghai 200240, Peoples R China
[3] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
Laser shock; Strain engineering; Defect engineering; 2D material; Hydrogen sensing; MOS2; MONOLAYERS; SEMICONDUCTOR; ADSORPTION; HYBRID; PD;
D O I
10.1016/j.snb.2024.135856
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The development of sensor devices that detect low-concentrations hydrogen at room temperature is becoming increasingly important for the safe use of hydrogen. In this study, the introduction of strain and defects in two-dimensional materials has been realised by laser shock and its application in gas sensing. The strain and defect density of monolayer MoS2 increase after multiple laser shock, providing more active sites for gas adsorption and improving the ability to adsorb hydrogen atoms. Under the synergistic effect of strain and defects, the response of non-noble metal nanoparticles/MoS2 photoelectric hydrogen sensors is accelerated, and their sensing performance (83% for 200 ppm) is 9.5 times higher than that of pure MoS2 devices (8.7% for 200 ppm) at room temperature (25 degree celsius). As a proof of concept, laser shock induced 2D material strain and defect engineering has opened up new ideas for improving the performance of photoelectric gas sensors at room temperature.
引用
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页数:9
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