Exciton-Phonon Coupling Induces a New Pathway for Ultrafast Intralayer-to-Interlayer Exciton Transition and Interlayer Charge Transfer in WS2-MoS2 Heterostructure: A First-Principles Study

被引:7
|
作者
Chan, Yang-hao [1 ,2 ]
Naik, Mit H. [3 ,4 ]
Haber, Jonah B. [3 ,4 ]
Neaton, Jeffrey B. [3 ,4 ]
Louie, Steven G. [3 ,4 ]
Qiu, Diana Y. [5 ]
da Jornada, Felipe H. [6 ]
机构
[1] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan
[2] Natl Ctr Theoret Sci, Phys Div, Taipei 10617, Taiwan
[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[4] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
[5] Yale Univ, Dept Mech Engn & Mat Sci, New Haven, CT 06520 USA
[6] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
exciton-phononcoupling; ultrafast charge transfer; WS2/MoS2; heterobilayer; relaxationtime; QUASI-PARTICLE; MOS2/WS2; DYNAMICS; ABSORPTION; SEPARATION;
D O I
10.1021/acs.nanolett.4c01508
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Despite the weak, van der Waals interlayer coupling, photoinduced charge transfer vertically across atomically thin interfaces can occur within surprisingly fast, sub-50 fs time scales. An early theoretical understanding of charge transfer is based on a noninteracting picture, neglecting excitonic effects that dominate optical properties of such materials. We employ an ab initio many-body perturbation theory approach, which explicitly accounts for the excitons and phonons in the heterostructure. Our large-scale first-principles calculations directly probe the role of exciton-phonon coupling in the charge dynamics of the WS2/MoS2 heterobilayer. We find that the exciton-phonon interaction induced relaxation time of photoexcited excitons at the K valley of MoS2 and WS2 is 67 and 15 fs at 300 K, respectively, which sets a lower bound to the intralayer-to-interlayer exciton transfer time and is consistent with experiment reports. We further show that electron-hole correlations facilitate novel transfer pathways that are otherwise inaccessible to noninteracting electrons and holes.
引用
收藏
页码:7972 / 7978
页数:7
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