Separation of terahertz and DC conductivity transitions in epitaxial vanadium dioxide films

被引：0

作者：

Lu, Chang ^{[1
]}

Gao, Min ^{[2
]}

Liu, Junxiao ^{[3
]}

Lu, Yantong ^{[3
]}

Wen, Tianlong ^{[3
]}

Lin, Yuan ^{[2
,4
]}

机构：

[1] Shenzhen Inst Informat Technol, Dept Elect Commun & Technol, Shenzhen 518172, Peoples R China

[2] Univ Elect Sci & Technol China, Sch Mat & Energy, Chengdu 610054, Peoples R China

[3] Univ Elect Sci & Technol China, Sch Elect Sci & Technol, Chengdu 610054, Peoples R China

[4] Univ Elect Sci & Technol China, Engn Cooperat Appl Med Res Ctr, Chengdu 610054, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2024年 / 135卷 / 22期

基金：

中国国家自然科学基金;

关键词：

METAL; SPECTROSCOPY; PHASE;

D O I：

10.1063/5.0209629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Terahertz (THz) light, probing electronic responses near the Fermi level, is closely linked to DC transport. In this study, we investigate the in situ THz and DC conductivity of epitaxial VO2 films near the heating-induced insulator-metal transition. We find that the THz conductivity transition occurs at lower temperatures than the DC conductivity transition, with the separation increasing with film thickness and crystallization quality. Analysis of the complex conductivity spectra attributes this separation to released carrier confinement at THz frequencies. Our findings contribute to a deeper understanding of electron dynamics in VO(2 )films.

引用

页数：8

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